DTEC ENGIMECH LLP – Sealing Products

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Reaction Bonded Silicon Carbide (RBSiC)

Reaction bonded silicon carbide, known as siliconized silicon carbide, is created via a chemical reaction between porous carbon or graphite and molten silicon. This method is commonly referred to as Reaction Sintering.

Sintered Silicon Carbide(SSiC)

Sintered in a vacuum furnace using high purity ultra-fine silicon carbide powder (sub-micron) at temperatures between 2100°C and 2200°C, the sintering process effectively densifies the green body.

Technical Properties Of RBSiC Product

Properties	Unit Of Measurement	Values
Density	g/cm³	>3.02
Porosity	%	<0.1
Bending Strength @ 20 °C & @ 1000 °C	MPa	250 & 280
Modulus Of Elasticity @ 20 °C & @ 1000 °C	GPa	330 & 300
Thermal Conductivity @ 1000 °C	W/m·K	45
Coefficient Of Thermal Expansion	10⁻⁶ / °F	4.5

Technical Properties Of SSiC Product

Properties	Unit Of Measurement	Values
Purity (Silicon)	%	>99.8
Density	g/cm³	3.10–3.15
Hardness	HV	2800
Crystal Structure	—	Hexagonal
Compressive Strength	MPa	>2500
Bending Strength	MPa	>450
Transverse Rupture Strength	MPa	>500
Coefficient Of Thermal Expansion	10⁻⁶ / °C	4.0
Elastic Modulus	GPa	≈ 410
Thermal Conductivity	W/m·K	100
Mean Specific Heat	J/kg·K	670
Max. Use Temp	°C	1600